Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

ABSTRACT

A semiconductor device has multilevel memory cells, each cell storing at least three levels of data each. At least a first data composed of first data bits and a second data composed of second data bits are arranged in order that at least a bit of an N-order of the first bits and a bit of the N-order of the second bits are stored in one of the cells, the N being an integral number. A voltage corresponding to the N-order bits is generated and applied to the one of the cells in response to an address information corresponding thereto. Another semiconductor device has multilevel memory cells arranged so as to correspond to a physical address space, each cell storing 2 n  levels of data each expressed by n (n≧2) number of bits (X 1 , X 2 , . . . , Xn). A logical address is converted into a physical address of the physical address space. Judging is made whether a logical address space including the logical address matches the physical address space. When matched, the most significant bit X 1  is specified once using a reference value. The specified bit is output from one of the cells corresponding to the physical address. If not matched, the bits (X 2 , . . . , Xn) are specified by n−time specifying operation maximum using maximum n number of different reference values. The data writing/reading operations to/from the semiconductor devices can be stored in a computer readable medium as program codes for causing a computer to execute these operations.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a multilevel semiconductormemory device, data writing/reading methods thereto/therefrom, and astorage medium storing data writing/reading programs.

[0002] As an error correction function of codes stored in asemiconductor memory device, a method of using Hamming codes has beenused. In the semiconductor memory device using the Hamming codes, whenfour-bit data (m1, m2, m3, m4), for instance is required to be stored,three check bits (p1, p2, p3) are obtained by a coder, and seven bits intotal of the four data bits and the three check bits are stored.

[0003] When the Hamming codes stored in the semiconductor memory deviceare read, the read data (y1, y2, y3, y4, y5, y6, y7) is given to adecoder to obtain error-corrected data (m1, m2, m3, m4). In theabove-mentioned semiconductor memory device, it is possible to correctan error of one bit of the read data (y1, y2, y3, y4, y5, y6, y7). Forfurther detail, refer to [Coding Theory] by Hideki IMAI, published byElectronic Information Communications Institute (Ver. 5), Jun. 10, 1994,for instance.

[0004] Recently, however, as disclosed by Japanese Laid-Open Patent No.6(1994)-195687, there has been developed a multilevel semiconductormemory device which can store three or more levels of data each in asingle memory cell. A plurality of threshold voltages are set in themultilevel semiconductor memory device. For instance, in the case offour-level non-volatile semiconductor memory, four threshold voltages (0V, 2 V, 4 V, 6 V) are set to each memory cell, respectively, so thattwo-bit data can be stored in a single memory cell. In other words, thethreshold voltage of the memory cell is set to any one of 1 V, 2 V, 4 Vand 6 V in correspondence to each of four storage contents of (00, 01,10, 11).

[0005] Here, when the error correction function based upon the Hammingcodes is provided for the multilevel semiconductor memory device, bitsof a code train obtained by the coding are stored in sequence and twoadjacent bits are stored in the same memory cell.

[0006] For instance, the case where check bits (p1, p21, p31) and (p12,p22, p32) are obtained on the basis of data bits (m11, m21, m31, m41)and ((m12, m22, m32, m42) and further these bits are stored in themultilevel memory cell will be explained hereinbelow. That is, when theHamming codes composed of these data bits and these check bits arestored in the multilevel memory cell, these bits have been stored in theorder of (m11, m21), (m31, m41), (p1, p21), (p31, m12), (m22, m32),(m42, p12), and (p22, p32).

[0007] Here, the way of producing an error in the multilevelsemiconductor memory devices will be explained hereinbelow by taking thecase of the multilevel non-volatile memory. In this case, since an erroroccurs due to change in threshold voltage, there exists a highpossibility that an error occurs in two-bit data at the same time; thatis, for example, “10” is changed to “01”.

[0008] In other words, the errors caused in the multilevel semiconductormemory device are characterized in that errors occur concentrically inan interval of a code series according to the number of levels to bestored in a single multilevel memory cell. This is referred to as bursterror. When this burst error occurs, the storage status of a singlemultilevel memory cell changes, and thus two-bit error occurs. In thiscase, since two or more errors occur in a single Hamming code, thereexists a problem in that the code cannot be decoded correctly.

[0009] As another method, other than the one using the Hamming code,Japanese Patent Laid-Open No. 60(1985)-163300 discloses an errorcorrection method for a multilevel semiconductor memory device that usesmultiple codes. In this method, however, the fact that burst errorsoccur with a high possibility in the case of the multilevelsemiconductor memory device is not considered. Thus, there exists aproblem in that the error correction efficiency is not high.

[0010] Further, in the multilevel memory cell, there exists anotherproblem in that the number of read operations required for a singlememory cell increases. Here, a data reading method will be explainedhereinbelow by taking the case of the read operation required for thefour-level semiconductor memory device. In the semiconductor memorydevice, when receiving an external read instruction, the memory devicewaits an input address. In this case, the input address is a logicaladdress not a physical address corresponding to an actual memory cell.The physical address is thus calculated on the basis of the inputlogical address.

[0011] Successively, on the basis of the calculated physical address, itis checked whether the threshold voltage of the designated memory cellis set to any one of 0 V, 2 V, 4 V and 6 V. The checked thresholdvoltage is then converted into two-bit data. In practice, referencevoltages (e.g., 1 V, 3 V and 5 V) are applied in sequence to the memorycell. In this case, when the reference voltage of 1 V is applied, if acurrent flows through the source and drain of the memory cell, thethreshold voltage of the memory cell is decided as being 0 V, so that“00” data can be read. On the other hand, although a current does notflow at 1 V, when a current flows at 3 V, the threshold voltage of thememory cell is decided as being 2 V, so that “01” data can be read.Further, although the current does not flow at 1 V and 3V, when acurrent flows at 5 V, the threshold voltage of the memory cell isdecided as being 4 V, so that “10” data can be read. Further, when thecurrent does not flow at all the voltages applied to the memory cell,the threshold voltage of the memory cell is decided as 6 V, so that “11”is read. In the example, although four levels are set to a single memorycell; that is, two-bit data are stored, the method of writing andreading multilevel data (more than two) has been studied.

[0012] In the case of the multilevel memory cell, however, there existsa problem in that the number of read operations required for a singlememory cell increases.

[0013] For instance, when four levels are stored in a single memory cellas described above, in the four-level semiconductor memory device, threeread and check operations must be always executed to specify to whichlevel of the four levels the threshold voltage of the memory cellbelongs in each read operation, irrespective of the input address. Inpractice, although the read and check operations are executed byapplying 1 V, 3 V and 5 V stepwise to the memory cell, this is the sameas that three read and check operations are necessary.

[0014] To overcome this problem, the Inventors have already proposed amethod of increasing the read operation speed of the memory cell, inJapanese Patent Laid-Open No. 7(1995)-201189. When this method isexplained in correspondence to the four-level semiconductor device,first 3 V is applied to the memory cell, and then the high-order bit ofthe two-bit data is decided according to whether a current flows or not.In this case, when a current flows, the high-order bit is decided as“0”, and when the current does not flow, the high-order bit is decidedas “1”. Successively, when the high-order bit is decided as “0”, 1 V isfurther applied to the memory cell. When a current flows, the two-bitdata of the memory cell is decided as “00”, and when the current doesnot flow, the data is decided and output as “01”. On the other hand,when the high-order bit is decided as “1”, 5 V is further applied to thememory cell. When a current flows, the two-bit data of the memory cellis decided as “10”, and when the current does not flow, the data isdecided and output as “11”. As described above, in this data readingmethod proposed by the Inventors, it is possible to specify two-bit datastored in a single memory cell by two read operations.

[0015] In this data reading method, however, it is always necessary tospecify to which level of the four levels the threshold voltage of thememory cell belongs, irrespective of the logical address; that is, evenwhen the logical address designates the high-order bit of the memorycell.

[0016] As described above, in the multilevel semiconductor memorydevice, data are output after the data stored in the memory cell hasbeen perfectly specified in the read operation, irrespective of theinput logical address. There exists a problem in that a time longer thannecessity is needed, with the result that the data reading speed isinevitably limited.

SUMMARY OF THE INVENTION

[0017] With these problems in mind, therefore, it is the object of thepresent invention to provide a multilevel semiconductor memory device,writing/reading methods thereto/therefrom and a storage medium storingwriting/reading programs which can execute the error correctioneffectively, even if the multilevel data stored in a single memory cellis lost.

[0018] Further, another object of the present invention is to provide amultilevel semiconductor memory device, writing/reading methodsthereto/therefrom and a storage medium storing writing/reading programs,which can read data of high access frequency at a high speed on thebasis of the input logical address, to further shorten the access timerequired in the read operation.

[0019] The present invention provides a semiconductor device comprising:a plurality of multilevel memory cells, each cell storing at least threelevels of data each; arranging means for accepting at least a first datacomposed of a plurality of first data bits and a second data composed ofa plurality of second data bits, the first and the second data beingcoded by a coding method, and for arranging the first and the seconddata bits in order that at least a bit of an N-order of the first databits and a bit of the N-order of the second data bits are stored in oneof the cells, the N being an integral number; generating means forgenerating at least a voltage corresponding to the N-order bits; andapplying means for applying the voltage to the one of the cells inresponse to an address information corresponding to the one of thecells.

[0020] Further, the present invention provides a method of writing dataof bits in a semiconductor device having a plurality of multilevelmemory cells, each cell storing at least three levels of data each,comprising the steps of: entering at least a first data composed of aplurality of first data bits and a second data composed of a pluralityof second data bits, the first and the second data being coded by acoding method; arranging the first and the second data bits such that atleast a bit of an N-order of the first data bits and a bit of theN-order of the second data bits are stored in one of the cells, the Nbeing an integral number; generating at least a voltage corresponding tothe N-order bits; and applying the voltage to the one of the cells inresponse to an address information corresponding to the one of thecells.

[0021] Further, the present invention provides a computer readablemedium storing program code for causing a computer to write data of bitsin a semiconductor device having a plurality of multilevel memory cells,each cell storing at least three levels of data each, comprising: firstprogram code means for entering at least a first data composed of aplurality of first data bits and a second data composed of a pluralityof second data bits, the first and the second data being coded by acoding method; and second program code means for arranging the first andthe second data bits such that at least a bit of an N-order of the firstdata bits and a bit of the N-order of the second data bits are stored inone of the cells, the N being an integral number.

[0022] Further, the present invention provides a semiconductor devicecomprising: converting means for converting a logical address into aphysical address; a plurality of multilevel memory cells arranged so asto correspond to a physical address space including the physicaladdress, each cell storing 2^(n) levels of data each expressed by n(n≧2) number of bits (X1, X2, . . . , Xn); judging means for judgingwhether a logical address space including the logical address matchesthe physical address space; specifying means for specifying the mostsignificant bit X1, by one-time specifying operation, by means of areference value when the logical address space matches the physicaladdress space; and outputting means for outputting the specified bitfrom one of the cells corresponding to the physical address.

[0023] Further, the present invention provides a method of reading n(n≧2) number of bits (X1, X2, . . . , Xn) from a plurality of multilevelmemory cells arranged so as to correspond to a physical address space,each cell storing 2^(n) levels of data each expressed by the bits (X1,X2, . . . , Xn), comprising the steps of: converting a logical addressinto a physical address included in the physical address space; judgingwhether a logical address space including the logical address matchesthe physical address space; specifying the most significant bit X1, byone-time specifying operation, by means of a reference value when judgedthat the logical address space matches the physical address space; andoutputting the specified bit from one of the cells corresponding to thephysical address.

[0024] Further, the present invention provides a method of reading n(n≧2) number of bits (X1, X2, . . . , Xn) from a plurality of multilevelmemory cells arranged so as to correspond to a physical address space,each cell having at least one transistor, each cell storing 2^(n) levelsof data each expressed by the bits (X1, X2, . . . , and Xn), comprisingthe steps of: converting a logical address into a physical addressincluded in the physical address space; judging whether a logicaladdress space including the logical address matches the physical addressspace; specifying the most significant bit X1 by applying apredetermined reference voltage to a gate of the transistor to determinewhether a current flows between a source and a drain of the transistorwhen the logical address space matches the physical address space; andoutputting the specified bit from one of the cells corresponding to thephysical address.

[0025] Further, the present invention provides a method of reading n(n≧2) number of bits (X1, X2, . . . , Xn) from a plurality of multilevelmemory cells arranged so as to correspond to a physical address space,each cell having at least one transistor, each cell storing 2^(n) levelsof data each expressed by the bits (X1, X2, . . . , and Xn), comprisingthe steps of: converting a logical address into a physical addressincluded in the physical address space; judging whether a logicaladdress space including the logical address matches the physical addressspace; specifying the most significant bit X1 by comparing an outputvoltage of the transistor corresponding to the most significant bit witha reference voltage when the logical address space matches the physicaladdress space; and outputting the specified bit from one of the cellscorresponding to the physical address.

[0026] Further, the present invention provides a computer readablemedium storing program code for causing a computer to read n (n≧2)number of bits (X1, X2, . . . , Xn) from a plurality of multilevelmemory cells arranged so as to correspond to a physical address space,each cell storing 2^(n) levels of data each expressed by the bits (X1,X2, . . . , Xn), comprising: first program code means for converting alogical address into a physical address included in the physical addressspace; second program code means fop judging whether a logical addressspace including the logical address matches the physical address space;third program code means for specifying the most significant bit X1, byone-time specifying operation, by means of a reference value when judgedthat the logical address space matches the physical address space; andfourth program code means for outputting the specified bit from one ofthe cells corresponding to the physical address.

[0027] Further, the present invention provides a computer readablemedium storing program code for causing a computer to read n (n≧2)number of bits (X1, X2, . . . , Xn) from a plurality of multilevelmemory cells arranged so as to correspond to a physical address space,each cell having at least one transistor, each cell storing 2^(n) levelsof data each expressed by the bits (X1, X2, . . . , Xn), comprising:first program code means for converting a logical address into aphysical address included in the physical address space; second programcode means for judging whether a logical address space including thelogical address matches the physical address space; third program codemeans for specifying the most significant bit X1 by applying a referencevoltage to a gate of the transistor when the logical address spacematches the physical address space to determine whether a current flowsbetween a source and a drain of the transistor; and fourth program codemeans for outputting the specified bit from one of the cellscorresponding to the physical address.

[0028] Further, the present invention provides a computer readablemedium storing program code for causing a computer to read n (n≧2)number of bits (X1, X2, . . . , Xn) from a plurality of multilevelmemory cells arranged so as to correspond to a physical address space,each cell having at least one transistor, each cell storing 2^(n) levelsof data each expressed by the bits (X1, X2, . . . , Xn), comprising:first program code means for converting a logical address into aphysical address included in the physical address space; second programcode means for judging whether a logical address space including thelogical address matches the physical address space; third program codemeans for specifying the most significant bit X1 by comparing an outputvoltage of the transistor corresponding to the most significant bit witha reference voltage when the logical address space matches the physicaladdress space; and fourth program code means for outputting thespecified bit from one of the cells corresponding to the physicaladdress.

[0029] Further, the present invention provides a semiconductor devicehaving a plurality of multilevel memory cells, each cell storing one ofat least three levels of data each, the semiconductor device comprisinga bit disperser for dispersing bits over the plurality of multilevelmemory cells to store the bits therein, the bits constituting at leastone code data coded by a coding method to be stored in the cells.

[0030] Further, the present invention provides a computer readablemedium storing program code for causing a computer to store data in asemiconductor device having a plurality of multilevel memory cells, eachcell storing one of at least three levels of data each, comprising aprogram code means for dispersing bits over the plurality of multilevelmemory cells to store the bits therein, the bits constituting at leastone code data coded by a coding method to be stored in the cells.

[0031] Further, the present invention provides a method of writing atleast one code data coded by a coding method in a semiconductor devicehaving a plurality of multilevel memory cells, each cell storing one ofat least three levels of data each, the method comprising the step ofdispersing bits constituting the code data over the plurality ofmultilevel memory cells.

[0032] Further, the present invention provides a computer readablemedium storing program code for causing a computer to write at least onecode data coded by a coding method in a semiconductor device having aplurality of multilevel memory cells, each cell storing one of at leastthree levels of data each, comprising the program code for dispersingbits constituting the code data over the plurality of multilevel memorycells.

[0033] Further, the present invention provides a semiconductor devicecomprising: inputting means for inputting a logical address; convertingmeans for converting the logical address into a physical address; aplurality of multilevel memory cells arranged so as to correspond tophysical addresses, each cell storing at least three levels of dataeach, the data being expressed by data components of two-dimension ormore; controlling means for selecting one of the cells corresponding tothe physical address and designating one of the data components inaccordance with the logical address; and outputting means for outputtingthe designated data component, wherein the semiconductor device has ajudging value for specifying, by one-time specifying operation, at leastone of the data components, and when the logical address is included inan address space A1 that corresponds to an address space including thephysical address, the controlling means specifies the designated datacomponent by means of the judging value, thus the specified data beingoutput by the outputting means.

[0034] Further, the present invention provides a method of reading datastored in a semiconductor device having at least one multilevel memorycell provided so as to correspond to a physical addresses converted froman input logical address, the cell having a control gate, a source and adrain, the cell storing at least three levels of data each, the databeing expressed by data components of two-dimension or more; comprisingthe steps of: preparing a judging value for specifying at least one ofthe data components; and applying a voltage corresponding to the judgingvalue to the control gate to determine whether a current flows betweenthe source and the drain when the logical address is included in anaddress space A1 that corresponds to an address space including thephysical address.

[0035] Further, the present invention provides a computer readablemedium storing program code for causing a computer to read data storedin a semiconductor device having at least one multilevel memory cellprovided so as to correspond to a physical addresses converted from aninput logical address, the cell having a control gate, a source and adrain, the cell storing at least three levels of data each, the databeing expressed by data components of two-dimension or more; comprising:first program code means for preparing a judging value for specifying atleast one of the data components; and second program code means forapplying a voltage corresponding to the judging value to the controlgate to determine whether a current flows between the source and thedrain when the logical address is included in an address space A1 thatcorresponds to an address space including the physical address.

[0036] Further, the present invention provides a semiconductor devicecomprising: a plurality of multilevel memory cells, each cell storingone of at least three different levels of data each; first coding meansfor converting, by a coding method, a first data into a first codecomposed of at least two-digit code components; second coding means forconverting, by a coding method, a second data into a second codecomposed of at least two-digit code components; and arranging means forarranging the code components in order to store at least two pairs ofcode components in corresponding cells, each pair having a codecomponent of the first code and a code component of the second code of asame digit.

[0037] Further, the present invention provides a semiconductor devicecomprising: a plurality of multilevel memory cells, each cell storingone of at least three different levels of data each; coding means forconverting input data into a code of at least two digits by a codingmethod; and separating means for separating the code by a specificnumber of digits into at least a first and a second block of codecomponents to store at least a code component group in at least one ofthe cells, the group having a code component of the first block and acode component of the second block of a same digit.

[0038] According to the present invention, when an error occurs inmultilevel data stored in a single multilevel memory cell, data of theminimum number of error-correctable bits is lost in one code, it ispossible to execute the error correction effectively.

[0039] Further, according to the present invention, logical addressesare divided hieratically into an address space of relatively high accessspeed and another address space of relatively low access speed. And, apartial space one-to-one corresponding to the address space formed byphysical addresses is determined as the address space of relatively highaccess speed. Further, data in the address space of relatively highaccess speed is stored in the specific component, for example thehigh-order bit, in each memory cell. This data is judged by use of onejudging value.

[0040] When the input logical address is included in the partial space,this logical address designates the high-order bit data. It is thuspossible to immediately detects the high-order bit data by a singledecision process by use of judging value. It is thus possible to readdata from the semiconductor device with multilevel memory cells in anextremely high efficiency by storing data of the highest accessfrequency and data of a relatively low access frequency in the high- andthe low-order bit, respectively in each cell.

BRIEF DESCRIPTION OF THE DRAWINGS

[0041]FIG. 1 is a block diagram showing a main configuration of anEEPROM in the preferred embodiments according to the p resent invention;

[0042]FIG. 2 is a schematic cross-sectional view showing a floating-gatetype memory cell of the EEPROM in the preferred embodiments according tothe present invention;

[0043]FIG. 3 is an illustration for assistance in explaining the firstembodiment of the method of data writing according to the presentinvention;

[0044]FIG. 4 is an illustration for assistance in explaining the secondembodiment of the method of data writing according to the presentinvention;

[0045]FIGS. 5A and 5B are illustrations for assistance in explaining themodifications of the second embodiment of the method of data writingaccording to the present invention;

[0046]FIG. 6 is an illustration for assistance in explaining the thirdembodiment of the method of data writing according to the presentinvention;

[0047]FIGS. 7A and 7B are illustrations for assistance in explaining themodifications of the third embodiment of the method of data writingaccording to the present invention;

[0048]FIG. 8 is a flowchart showing the first embodiment of the methodof data reading according to the present invention;

[0049]FIG. 9 is a block diagram for explaining a method of judging athreshold voltage in the flowchart shown in FIG. 8;

[0050]FIG. 10 is a flowchart showing the second embodiment of the methodof data reading according to the present invention; and

[0051]FIG. 11 is a block diagram for explaining another method ofjudging a threshold voltage.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0052] Embodiments of the multilevel semiconductor memory device, themethods of writing/reading data from/to the memory device, and thestorage medium storing the data writing/reading programs according tothe present invention will be described hereinbelow with reference tothe attached drawings.

[0053]FIG. 1 shows the essential construction of a multilevel EEPROM(electrically erasable and programmable read only memory), to whichembodiments according to the present invention are applied. In FIG. 1, amemory cell array 1 is formed by arranging a plurality of memory cellsin a matrix pattern. Each memory cell is of floating gate type, as shownin FIG. 2. In FIG. 2, a drain 12 and a source 13 each formed by ann-type impurity diffusion layer are formed on a surface of a p-typesilicon substrate 11. Further, a channel region 14 is formed between thedrain 12 and the source 13.

[0054] A bit line 15 is connected to the drain 12, and a source line 16is connected to the source 13. Further, formed on the channel region 14is a tunnel insulating film 20 formed of SiO₂ film and having athickness of about 10 nm. On this tunnel insulating film 20, there areformed in sequence a floating gate 17 formed of a low-resistancepolysilicon, an interlayer insulating film 18, and a control gate (wordline) 19 formed of a low-resistance polysilicon.

[0055] The word line 19 is connected to a decoder 2 provided asextending in the column direction of the memory cell array 1. The bitline 15 is connected to a multiplexer 4 provided as extending in the rowdirection of the memory cell array 1. And, the source line 16 isgrounded.

[0056] When data are written in the multilevel EEPROM as describedabove, the operation mode is set to a program mode. Further, data areinput through an input/output interface (I/F) 8; on the other hand,addresses are input through an input interface I/F 7. Each input addressis a logical address and hence converted into a physical address by aconverter 9.

[0057] The data input through the input I/F 8 are given to a signalcontroller 6. The bit data of the given data are rearranged by a bitdata separator 6 a provided in the signal controller 6, as described infurther detail later.

[0058] The input data whose bits are rearranged are given to a voltagegenerator and controller 3, to generate voltages according to the bitdata. The voltages generated as described above are applied to thememory cell array 1 through a decoder 2, so that predetermined thresholdvoltages are set to the memory cells.

[0059] The first embodiment of the method of data writing according tothe present invention will be described hereinbelow with reference toFIG. 3.

[0060] The multilevel EEPROM described in this embodiment is afour-level memory device, in which the threshold voltage of each memorycell is set to any of the four values (0 V, 2 V, 4 V, 6 V) correspondingto each of two-bit data (00, 01, 10, 11) to be stored. Employed in thisEEPROM is the method of interleaving, by m-times, a code C having a codelength n and a burst error correction capability L, as the burst errorcorrection code.

[0061] In data rewriting, whenever 8-bit data are input, the input datais divided into 4×2 data bits as (m11, m21, m31, m41) and (m12, m22,m32, m42). On the basis of the divided data bits, 3×2 check bits (p11,p21, p31) and (p12, p22, p32) are formed.

[0062] Further, on the basis of these data bits (m11, m21, m31, m41) and(m12, m22, m32, m42) and the check bits (p11, p21, p31) (p12, p22, p32),two code words (m11, m21, m31, m41, p11, p21, p31) and (m12, m22, m32,m42, p12, p22, p32) are formed.

[0063] The two code words formed as described above are given to the bitdata separator 6 a, and then the bits of the code words are put in thepositions of 2×7 arrangement as shown in FIG. 3. Further, combinationsof (m11, m12), (m21, m22), (m31, m32), (m41, m42), (p1, p12), (p21, p22)and (p31, p32) are sequentially stored in the seven memory cells.

[0064] Accordingly, in FIG. 3, m11 and m12 are stored in the memory cell1 as the high- and the low-order bit, respectively. In the same way, m21and m22; m31 and m32; m41 and m42; p11 and p12; p21 and p22; and p31 andp32 are stored in the memory cells 2 to 7, respectively.

[0065] As described later in further detail, each code word can becorrected even if a single error occurs. For instance, as shown in FIG.3, even if the threshold voltage of the third memory cell 3 changes andthereby a burst error of two-bit length occurs, since this error is asingle error in a single code word, the correction is enabled. In otherwords, even if the threshold voltage of one of the seven memory cellschanges; that is, even when a burst error such that the stored contents“01” change to “10” occurs, for instance, the correction is enabled.

[0066] The second embodiment of the method of data writing according tothe present invention will be described hereinbelow.

[0067] The semiconductor device applied with the second embodiment is aneight-level memory device, in which the threshold voltage of each memorycell is set to any of eight levels (0 V, 1 V, 2 V, 3 V, 4 V, 5 V, 6 V, 7V) corresponding to three-bit data (000, 001, 010, 011, 100, 101, 110,111) to be stored.

[0068] In data rewriting, whenever 12-bit data is input, the input datais divided into 4×3 data bits (m11, m21, m31, m41), (m12, m22, m32, m42)and (m13, m23, m33, m43). On the basis of the divided data bits, 3×3redundant check bits (p11, p21, p31), (p12, p22, p32) and (p13, p23,p33) are obtained.

[0069] On the basis of these data bits and check bits, three code words(m11, m21, m31, m41, p11, p21, p31), (m12, m22, m32, m42, p12, p22, p32)and (m13, m23, m33, m43, p13, p23, p33) are formed in 3×7 arrangement.Further, as shown in FIG. 4, (m11, m12, m13), (m21, m22, m23), (m31,m32, m33), (m41, m42, m43), (p11, p12, p13), (p21, p22, p23) and (p31,p32, p33) are stored in the seven memory cells.

[0070] Accordingly, in FIG. 4, m11, m12 and m13 are stored in the memorycell 1 as the high-, the medium- and the low-order bit, respectively. Inthe same way, m21, m22 and m23; m31, m32 and m33; m41, m42 and m43; p11,p12 and p13; p21, p22 and p23; and p31, p32 and p33 are stored in thememory cells 2 to 7, respectively.

[0071] Each code word can be corrected even if a single error occurs.For instance, as shown in FIG. 4, even if the threshold voltage of thethird memory cell 3 changes and thereby a burst error of three-bitlength occurs, since this error is a single error in a single code word,the correction is enabled. In other words, even if the threshold voltageof one of the seven memory cells changes; that is, even when a bursterror such that the stored contents “100” change to “011” occurs, forinstance, the correction is enabled.

[0072] Two modifications of the second embodiment of the method of datawriting according to the present invention will be describedhereinbelow.

[0073] The semiconductor device applied with the first modification isan eight-level memory device, in which the threshold voltage of eachmemory cell is set to any of eight levels (0 V, 1 V, 2 V, 3 V, 4 V, 5 V,6 V, 7 V) corresponding to three-bit data (000, 001, 010, 011, 100, 101,110, 111) to be stored. The first modification follows a specific linearcoding standard in which two errors per bit of a code word can becorrected.

[0074] In data rewriting, whenever data composed of a specific number ofbits, for example, K bits are input, the input data are divided intothree (K/3) data bits. Redundant bits are obtained on the basis of thedivided data bits to form a 14-bit code word (m11, m21, m31, m41, m51,m61, m71, m12, m22, m32, m42, m52, m62, m72) and a 7-bit code word (m13,m23, m33, m43, m53, m63, m73). In each code word, a specific number ofbits are data bits and the remaining bits are redundant bits for errorcorrection.

[0075] Then, the 14-bit code word (m11, m21, m31, m41, m51, m61, m71,m12, m22, m32, m42, m52, m62, m72) is divided into 7-bit code trains(m11, m21, m31, m41, m51, m61, m71) and (m12, m22, m32, m42, m52, m62,m72).

[0076] Then, the code train a (m11, m21, m31, m41, m51, m61, m71), thecode train b (m12, m22, m32, m42, m52, m62, m72) and one code word c(m13, m23, m33, m43, m53, m63, m73) are put in the positions of 3×7arrangement. Further, as shown in FIG. 5A, (m11, m12, m13), (m21, m22,m23), (m31, m32, m33), (m41, m42, m43), (m51, m52, m53), (m61, m62, m63)and (m71, m72, m73) are stored in the seven memory cells.

[0077] Accordingly, in FIG. 5A, m11, m12 and m13 are stored in thememory cell 1 as the high-, the medium- and the low-order bit,respectively. In the same way, m21, m22 and m23; m31, m32 and m33; m41,m42 and m43; m51, m52 and m53; m61, m62 and m63; and m71, m72 and m73are stored in the memory cells 2 to 7, respectively.

[0078] The code trains a and b, and the code word c can be correctedeven if a single error occurs. For instance, as shown in FIG. 5A, evenif a burst error of three-bit length occurs in the third memory cell 3,since this error is a single error in the code trains a and b, and thecode word c, and this error corresponds to two errors in the code wordcomposed of the code trains a and b, the correction is enabled. In otherwords, even if the threshold voltage of one of the seven memory cellschanges; that is, even when a burst error such that the stored contents“100” change to “011” occurs, for instance, the correction is enabled.

[0079] Next, the second modification of the second embodiment of themethod of data writing according to the present invention will bedescribed hereinbelow.

[0080] The semiconductor device applied with the second modification isan eight-level memory device, in which the threshold voltage of eachmemory cell is set to any of eight levels (0 V, 1 V, 2 V, 3 V, 4 V, 5 V,6 V, 7 V) corresponding to three-bit data (000, 001, 010, 011, 100, 101,110, 111) to be stored. The second modification follows a specificcoding standard in which a single error per bit of a code word can becorrected and two errors per bit of a code word can be detected.

[0081] In data rewriting, whenever 12-bit data is input, the input datais divided into 4×3 data bits (m11, m21, m31, m41), (m12, m22, m32, m42)and (m13, m23, m33, m43). By means of Hamming codes, 3×3 redundant bits(p11, p21, p31), (p12, p22, p32) and (p13, p23, p33) are obtained on thebasis of the divided data bits.

[0082] Then, all the seven bits are EX-ORed in each of the three codetrains (m11, m21, m31, m41, p11, p21, p31), (m12, m22, m32, m42, p12,p22, p32) and (m13, m23, m33, m43, p13, p23, p33). The resultantredundant bits q1, q2, and q3 are added to the three code trains,respectively, to form three code words (m11, m21, m31, m41, p11, p21,p31, q1), (m12, m22, m32, m42, p12, p22, p32, q2) and (m13, m23, m33,m43, p13, p23, p33, q3).

[0083] Then, the three code words are put in the positions of 3×8arrangement. Further, as shown in FIG. 5B, (m11, m12, m13), (m21, m22,m23), (m31, m32, m33), (m41, m42, m43), (p11, p12, p13), (p21, p22,p23), (p31, p32, p33) and (q1, q2, q3) are stored in the eight memorycells.

[0084] Accordingly, in FIG. 5B, m11, m12 and m13 are stored in thememory cell 1 as the high-, the medium- and the low-order bit,respectively. In the same way, m21, m22 and m23; m31, m32 and m33; m41,m42 and m43; p11, p12 and p13; p21, p22 and p23; p31, p32 and p33; andq1, q2 and q3 are stored in the memory cells 2 to 8, respectively.

[0085] Each code word can be corrected even if a single error occurs.For instance, as shown in FIG. 5B, even if a burst error of three-bitlength occurs in the third memory cell 3, since this error is a singleerror in each code word, the correction is enabled. In other words, evenif the threshold voltage of one of the eight memory cells changes; thatis, even when a burst error such that the stored contents “100” changeto “011” occurs, for instance, the correction is enabled. Further, if aburst error of one to three-bit length occurs in another memory cell,there are two errors in at least one code word. These two errors can bedetected and one of them can be corrected.

[0086] The third embodiment of the method of data writing according tothe present invention will be described hereinbelow.

[0087] The semiconductor device applied with the third embodiment is asixteen-level memory device, in which the threshold voltage of eachmemory cell is set to any of sixteen levels (0 V, 1 V, 1.25 V, 1.5 V,1.75 V, 2 V, 2.25 V, 2.5 V, 2.75 V, 3 V, 3.25 V, 3.5 V, 3.75 V, 4 V,4.25 V, 4.5 V) corresponding to four-bit data (0000, 0001, 0010, 0011,0100, 0101, 0110, 0111, 1000, 1001, 1010, 1011, 1100, 1101, 1110, 1111)to be stored.

[0088] In data rewriting, whenever 16-bit data is input, the input datais divided into 4×4 data bits (m11, m21, m31, m41), (m12, m22, m32,m42), (m13, m23, m33, m43) and (m14, m24, m34, m44). On the basis of thedivided data bits, 3×4 redundant bits (p11, p21, p31), (p12, p22, p32),(p13, p23, p33) and (p14, p24, p34) are obtained.

[0089] On the basis of these data bits and redundant bits, four codewords (m11, m21, m31, m41, p11, p21, p31), (m12, m22, m32, m42, p12,p22, p32), (m13, m23, m33, m43, p13, p23, p33) and (m14, m24, m34, m44,p14, p24, p34) are formed and put in the positions of 4×7 arrangement.Further, as shown in FIG. 6, (m11, m12, m13, m14), (m21, m22, m23, m24),(m31, m32, m33, m34), (m41, m42, m43, m44), (p11, p12, p13, p14), (p21,p22, p23, p24) and (p31, p32, p33, p34) are stored in the seven memorycells.

[0090] Accordingly, in FIG. 6, m11, m12, m13 and m14 are stored in thememory cell 1 as the first, the second, the third and the fourth bit,respectively. In the same way, m21, m22, m23 and m24; m31, m32, m33 andm34; m41, m42, m43 and m44; p11, p12, p13 and p14; p21, p22, p23 andp24; and p31, p32, p33 and p34 are stored in the memory cells 2 to 7,respectively.

[0091] Each code word can be corrected even if a single error occurs.For instance, as shown in FIG. 6, even if a burst error of four-bitlength occurs in the third memory cell 3, since this error is a singleerror in a single code word, the correction is enabled. In other words,even if the threshold voltage of one of the seven memory cells changes;that is, even when a burst error such that the stored contents “1000”change to “0111” occurs, for instance, the correction is enabled.

[0092] Two modifications of the third embodiment of the method of datawriting according to the present invention will be describedhereinbelow.

[0093] The semiconductor device applied with the first modification is asixteen-level memory device, in which the threshold voltage of eachmemory cell is set to any of sixteen levels (0 V, 1 V, 1.25 V, 1.5 V,1.75 V, 2 V, 2.25 V, 2.5 V, 2.75 V, 3 V, 3.25 V, 3.5 V, 3.75 V, 4 V,4.25 V, 4.5 V) corresponding to four-bit data (0000, 0001, 0010, 0011,0100, 0101, 0110, 0111, 1000, 1001, 1010, 1011, 1100, 1101, 1110, 1111)to be stored. The first modification follows a specific linear codingstandard in which two errors per bit of a code word can be corrected.

[0094] In data rewriting, whenever data composed of a specific number ofbits, for example, p bits is input, the input data is divided into four(p/3) data bits. Redundant bits are obtained on the basis of the divideddata bits to form two 14-bit code words (m11, m21, m31, m41, m51, m61,m71, m12, m22, m32, m42, m52, m62, m72) and (m13, m23, m33, m43, m53,m63, m73, m14, m24, m34, m44, m54, m64, m74). In each code word, aspecific number of bits are data bits and the remaining bits areredundant bits for error correction.

[0095] Then, these 14-bit code words are divided into 7-bit code trains(m11, m21, m31, m41, m51, m61, m71) and (m12, m22, m32, m42, m52, m62,m72), and (m13, m23, m33, m43, m53, m63, m73) and (m14, m24, m34, m44,m54, m64, m74), respectively.

[0096] Then, the code trains are put in the positions of 4×7arrangement. Further, as shown in FIG. 7A, (m11, m12, m13, m14), (m21,m22, m23, m24), (m31, m32, m33, m34), (m41, m42, m43, m44), (m51, m52,m53, m54), (m61, m62, m63, m64) and (m71, m72, m73, m74) are stored inthe seven memory cells.

[0097] Accordingly, in FIG. 7A, m11, m12, m13 and m14 are stored in thememory cell 1 as the first, the second, the third and the fourth bit,respectively. In the same way, m21, m22, m23 and m24; m31, m32, m33 andm34; m41, m42, m43 and m44; m51, m52, m53 and m54; m61, m62, m63 andm64; and m71, m72, m73 and m74 are stored in the memory cells 2 to 7,respectively.

[0098] Each code train can be corrected even if a single error occurs.For instance, as shown in FIG. 7A, even if a burst error of four-bitlength occurs in the third memory cell 3, since this error is a singleerror in each code train, and this error corresponds to two errors inthe code word composed of two of the code trains, the correction isenabled. In other words, even if the threshold voltage of one of theseven memory cells changes; that is, even when a burst error such thatthe stored contents “1000” change to “0111” occurs, for instance, thecorrection is enabled.

[0099] Next, the second modification of the third embodiment of themethod of data writing according to the present invention will bedescribed hereinbelow.

[0100] The semiconductor device applied with the second modification isa sixteen-level memory device, in which the threshold voltage of eachmemory cell is set to any of sixteen levels (0 V, 1 V, 1.25 V, 1.5 V,1.75 V, 2 V, 2.25 V, 2.5 V, 2.75 V, 3 V, 3.25 V, 3.5 V, 3.75 V, 4 V,4.25 V, 4.5 V) corresponding to four-bit data (0000, 0001, 0010, 0011,0100, 0101, 0110, 0111, 1000, 1001, 1010, 1011, 1100, 1101, 1110, 1111)to be stored. The second modification follows a specific coding standardin which a single error per bit of a code word can be corrected and twoerrors per bit of a code word can be detected.

[0101] In data rewriting, whenever 16-bit data is input, the input datais divided into 4×4 data bits (m11, m21, m31, m41), (m12, m22, m32,m42), (m13, m23, m33, m43) and (m14, m24, m34, m44). By means of Hammingcodes, 3×4 redundant bits (p11, p21, p31), (p12, p22, p32), (p13, p23,p33) and (p14, p24, p34) are obtained on the basis of the divided databits.

[0102] Then, all the seven bits are EX-ORed in each of the four codetrains (m11, m21, m31, m41, p11, p21, p31), (m12, m22, m32, m42, p12,p22, p32), (m13, m23, m33, m43, p13, p23, p33) and (m14, m24, m34, m44,p14, p24, p34). The resultant redundant bits q1, q2, q3 and q4 are addedto the four code trains, respectively, to form four code words (m11,m21, m31, m41, p11, p21, p31, q1), (m12, m22, m32, m42, p12, p22, p32,q2), (m13, m23, m33, m43, p13, p23, p33, q3) and (m14, m24, m34, m44,p14, p24, p34, q4).

[0103] Then, the four code words are put in the positions of 4×8arrangement. Further, as shown in FIG. 7B, (m11, m12, m13, m14), (m21,m22, m23, m24), (m31, m32, m33, m34), (m41, m42, m43, m44), (p11, p12,p13, p14), (p21, p22, p23, p24), (p31, p32, p33, p34) and (q1, q2, q3,q4) are stored in the eight memory cells.

[0104] Accordingly, in FIG. 7B, m11, m12, m13 and m14 are stored in thememory cell 1 as the first, the second, the third and the fourth bit,respectively. In the same way, m21, m22, m23 and m24; m31, m32, m33 andm34; m41, m42, m43 and m44; p11, p12, p13 and p14; p21, p22, p23 andp24; p31, p32, p33 and p34; and q1, q2, q3 and q4 are stored in thememory cells 2 to 8, respectively.

[0105] Each code word can be corrected even if a single error occurs.For instance, as shown in FIG. 7B, even if a burst error of four-bitlength occurs in the third memory cell 3, since this error is a singleerror in each code word, the correction is enabled. In other words, evenif the threshold voltage of one of the eight memory cells changes; thatis, even when a burst error such that the stored contents “1000” changeto “0111” occurs, for instance, the correction is enabled. Further, if aburst error of one- to four-bit length occurs in another memory cell,there are two errors in at least one code word. These two errors can bedetected and one of them can be corrected.

[0106] Another modification besides the modifications of the second andthe third embodiments of the method of data writing according to thepresent invention will be described hereinbelow.

[0107] For example, 56 bits of “0” are added to 64 pieces of originaldata to obtain 120-bit data. A 127-bit length hamming code is obtainedon the basis of the 120-bit data. All the 127 bits are EX-ORed to obtaina 128-bit code. The additional 56-bit “0” are removed from the 128-bitcode to obtain a 72-bit code word.

[0108] This coding method is capable of correcting one error anddetecting two errors per bit of a code word and often used as theSEC/DED code (Single-Error-Correction/Double-Error-Detecting Code) formain memories.

[0109] A practical example that the error correction is enabled even ifone error occurs in a single code word will be described hereinbelow. Atable below lists Hamming codes in which three redundant bits are addedto four data bits. TABLE 1 DIGITS: 1234567 BIT WEIGHT: CC8C421 0=0000000  1=1101001  2=0101010  3=1000011  4=1001100  5=0100101 6=1100110  7=0001111  8=1110000  9=0011001 10=1011010 11=011001112=0111100 13=1010101 14=0010110 15=1111111 Digits: 1234567 Read code:0101100 (4, 5, 6, 7) digit parity: ---- → 0 (2, 3, 6, 7) digit parity:-- -- →  1 (1, 3, 5, 7) digit parity: - - - - →  1 Error digit: 011 =3

[0110] In these Hamming codes, 1, 2 and 4 digits are redundant bits, andthese bits are decided in such a way that an even parity can be obtainedin each digit set of (1, 3, 5, 7), (2, 3, 6, 7) and (4, 5, 6, 7). Forinstance, when a code “0111100” corresponding to a decimal number of[12] is written, in case an error occurs so that a code “0101100” isread, it is possible to obtain an error digit by a binary number (011 inthis case) as shown in TABLE 1. Therefore, even if an error occurs, itis possible to correct the error securely.

[0111] Further, when the number of data bits is increased, since thiscode can be extended to that number, the number of redundant bits mnecessary for the n number of data bits can be expressed as

2^(m) =n+m+1   (1)

[0112] In the above description, the case where the present invention isapplied to a non-volatile memory device having floating gate type memorycells has been described. However, without being limited only to thefloating gate type memory cell, the present invention can be of courseapplied to MNOS (Metal-Nitride-Oxide-Silicon) type semiconductor memorydevices.

[0113] Further, the present invention can be applied to EPROMs, PROMs,mask ROMs, etc. in addition to the EEPROMs. In the mask ROMs, a storagestatus can be obtained by changing the threshold level thereof on thebasis of the control of impurity quantity put in the channel region of afield effect transistor by ion implantation.

[0114] Further, the four- and eight-level memory cells have beendescribed by way of example hereinabove. However, the data writingaccording to the present invention is not of course limited to onlythese levels.

[0115] Further, as a method of obtaining error correction codes,although interleaving has been explained, as far as an error of a burstlength corresponding to the data quantity stored in the memory cell canbe corrected by means of the error correction code, another method canbe of course adopted, such as cyclic codes or compact cyclic codes.

[0116] Next, embodiments of the method of data reading according to thepresent invention will be described hereinbelow with reference to theattached drawings.

[0117] Described in the first embodiment are the multilevel EEPROM shownin FIG. 1 and a method of data reading from the EEPROM.

[0118] In the read operation, first an external logical address signalis input to the converter 9 via input I/F 7. The converter 9 generates aphysical address signal corresponding to an actual memory cell on thebasis of the input logical address signal. In response to the physicaladdress signal, the signal controller 6 decides a word line (controlgate of FIG. 2) 19 and a bit line 15 (FIG. 2) both to be selected, andinstructs the decided results to the decoder 2 and the multiplexer 4.According to the instructions, the decoder 2 selects the word line 19,and the multiplexer 4 selects the bit line 15.

[0119] The signal controller 6 decides the magnitude of the voltage tobe applied to the control gate 19 of the selected memory cell, andinstructs the decided voltage to the voltage controller 3. The voltagecontroller 3 applies the decided voltage to the selected word line 19via decoder 2. On the other hand, the multiplexer 4 applies apredetermined voltage to the selected bit line 15. Therefore, it ispossible to determine whether a current flows through the selected bitline 15 according to the threshold voltage of the selected memory cell.

[0120] A status of the current with respect to the selected bit line 15is transmitted from the multiplexer 4 to the sense amplifier 5. Thesense amplifier 5 detects the presence or absence of the current flowingthrough the selected bit line 15, and transmits the detected result tothe signal controller 6. On the basis of the detected result of thesense amplifier 5, the signal controller 6 decides a voltage to be nextapplied to the control gate 19 of the selected memory cell, andinstructs the decided result to the voltage controller 3. Further, thesignal controller 6 outputs the stored data of the selected memory cellobtained by repeating the above-mentioned procedure, via output I/F 8.

[0121]FIG. 8 shows the flowchart showing a procedure of the firstembodiment of the reading method according to the present invention. Afour-level EEPROM having a storage capacity of 8 Mbits will be explainedby way of example. The four-level EEPROM has a logical address space of[00 0000] to [7F FFFF] and a physical address space of [00 0000] to [3FFFFF] in hexadecimal notation. Further, each memory cell stores 2-bit(=four levels) data (00, 01, 10, 11), so that the threshold voltages of(0 V, 2 V, 4 V, 6 V) are set to memory cells according to these data.

[0122] when the physical address of a memory cell is Ap, the data of thelogical address Ap is stored in the high-order bit of the two bits ofthe memory cell, and the logical address (Ap+[40 0000]) is stored in thelow-order bit thereof.

[0123] In other words, in the data rewriting operation, when the logicaladdress A1 of [00 0000] to [3F FFFF] and the data (0 or 1) to be storedare designated, the high-order bit of the memory cell existing at thephysical address A1 is rewritten to the designated data.

[0124] On the other hand, in the data rewriting operation, when thelogical address A1 of [40 0000] to [7F FFFF] and the data (0 or 1) to bestored are designated, the low-order bit of the memory cell existing atthe physical address (A1=[40 0000]) is rewritten to the designated data.

[0125] In FIG. 8, when an external read instruction is input in step S1and further a logical address signal is input to the input I/F 7 in stepS2, the signal controller 6 determines whether the input logical addresssignal indicates an address in the range of [00 0000] to [3F FFFF] ornot in step S3.

[0126] In step S3, when the logical address signal indicates an addressin the range of [00 0000] to [3F FFFF], since the logical addressmatches the physical address, it is decided that the data to be read isthe high-order bit of the two bits in step S4. In this case, a referencevoltage of 3 V is applied to the control gate 19 of the selected memorycell, and further it is determined whether a current flows between thedrain 12 and the source 13 through the selected bit line 15 and thesense amplifier 5 in step S5.

[0127] In step S5, when the current flows between the drain 12 and thesource 13 of the selected memory cell; that is, when the selected memorycell is conductive, it is decided that the high-order bit of the 2-bitdata stored in this memory cell is “0” since the threshold voltage ofthis selected memory cell is 0 V or 2 V. The decided data is outputimmediately via output I/F 8 in step S6.

[0128] On the other hand, in step S5, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, itis decided that the high-order bit of the 2-bit data stored in thismemory cell is “1”. Because the threshold voltage of this selectedmemory cell is 4 V or 6 V. The decided data is output immediately viaoutput I/F 8 in step S7.

[0129] Further, in step S3, when the logical address signal input to theinput I/F 7 indicates an address in the range of [40 0000] to [7F FFFF],the logical address does not match the physical address; that is, thephysical address is (logical address−[40 0000]). It is decided that thedata to be read is the low-order bit of the two bits in step S8. In thiscase, a reference voltage of 3 V is applied to the control gate 19 ofthe selected memory cell, and further it is determined whether a currentflows between the drain 12 and the source 13 through the selected bitline 15 and the sense amplifier 5 in step S9.

[0130] In step S9, when the current flows between the drain 12 and thesource 13 of the selected memory cell, the signal control circuit 6instructs the voltage control circuit 3 to apply a reference voltage of1 V to the control gate 19 of the selected memory cell in step S10.Because, the threshold voltage of this selected memory cell is 0 V or 2V.

[0131] Further, in step S10, when a current flows between the drain 12and the source 13 of the selected memory cell, it is decided that thelow-order bit of the 2-bit data of this memory cell is “0”. Because thethreshold voltage of this memory cell is 0 V. The decided data is outputimmediately via output I/F 8 in step S11.

[0132] On the other hand, in step S10, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, itis decided that the low-order bit of the 2-bit data of this memory cellis “1”. Because the threshold voltage of this selected memory cell is 2V. The decided data is output immediately via output I/F 8 in step S12.

[0133] Further, in step S9, when the current does not flow between thedrain 12 and the source 13 of the selected memory cell, the signalcontroller 6 instructs the voltage controller 3 to apply a referencevoltage of 5 V to the control gate 19 of the selected memory cell instep S13. Because the threshold voltage of this selected memory cell is4 V or 6 V.

[0134] Further, in step S13, when a current flows between the drain 12and the source 13 of the selected memory cell, it is decided that thelow-order bit of the 2-bit data of this memory cell is “0”. Because thethreshold voltage of this memory cell is 4 V. The decided data is outputimmediately via output I/F 8 in step S12.

[0135] On the other hand, in step S13, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, itis decided that the low-order bit of the 2-bit data of this memory cellis “1”. Because the threshold voltage of this memory cell is 6 V. Thedecided data is output immediately via output I/F 8 in step S13.

[0136] With respect to the reading method described above, a method ofdetermining whether a current flows between the drain 12 and the source13 of a selected memory cell by applying a reference voltage of 1 V, 3 Vor 5 V to the control gate 19 of the selected memory cell will beexplained with reference to FIGS. 1 and 9. For instance, in step S4 inFIG. 8, when the signal controller 6 receives a physical address fromthe converter 9 and decides that the data to be read is the high-orderbit of the 2-bit data, the signal controller 6 further decides that thevoltage to be applied to the control gate 19 of a selected memory cellis 3 V and instructs the decided voltage to the voltage controller 3.

[0137] In FIG. 9, the voltage controller 3 includes a 1 V-referencevoltage generator 3 a, a 3 V-reference voltage generator 3 b and a 5V-reference voltage generator 3 c.

[0138] In this example, the reference voltage generator 3 b generatesand applies 3 V as a reference voltage to a switching circuit 55. Thesignal controller 6 decides a word line to be selected in response to aninput physical address and instructs the decided result to the decoder2. According to the instruction, the decoder 2 outputs a decoding signalto the switching circuit 55.

[0139] On receiving the 3 V-reference voltage and the decoding signal,the switching circuit 55 applies the 3 V-reference voltage to theselected word line.

[0140] The sense amplifier 5 determines whether a current flows betweenthe drain 12 and the source 13 of a selected memory cell 1 a of the cellarray 1. More in detail, the sense amplifier 5 compares an outputvoltage of the memory cell 1 a and a predetermined reference voltagefrom a reference voltage generator 56. The comparison result isinstructed to the signal controller 6.

[0141] According to the instruction, the signal controller 6 decides avoltage of 1 V or 5 V that is applied next to the memory cell 1 a. Thesignal controller 6 then outputs data stored in the memory cell 1 a viaoutput I/F 8.

[0142] As described above, in this first embodiment, the logicaladdresses [00 0000] to [7F FFFF] are divided hieratically into anaddress space A₁ (logical addresses: [00 0000] to [3F FFFF] ofrelatively high access speed and an address space A₂ (logical addresses:[40 0000] to [7F FFFF] of relatively low access speed. And, a partialspace (logical addresses: [00 0000] to [3F FFFF]) one-to-onecorresponding to the address space formed by the physical addresses ([000000] to [3F FFFF]) within the logical addresses [00 0000] to [7F FFFF]is determined as the address space A₁ of relatively high access speed.Further, data in the address space A₁ is stored in the specificcomponent (here, the high-order bit) of the storage status of eachmemory cell.

[0143] When the input logical address is included in the above-mentionedpartial space (the logical addresses [00 0000] to [3F FFFF]), thislogical address designates the high-order bit data. It is thus possibleto immediately detects this high-order bit data by a single decisionprocess by use of the reference voltage of 3 V. The detected high-orderbit data is then output. In this case, it is possible to increase theaccess speed twice, as compared with the case where the respectivethreshold voltages are checked by use of all the reference voltages.

[0144] Therefore, the data having the highest access frequency can bestored in the high-order bits and the data having a relatively lowaccess frequency can be stored in the low-order bits. A programmer canoperate the EEPROM as if a single high speed memory device were providedaccording to the invention. It is thus possible to read data from themultilevel EEPROM in an extremely high efficiency.

[0145] Further, as the data and programs suitably stored in themultilevel EEPROM, there are BIOS (Basic Input/output System) of anarithmetic unit (as an example of the high access frequency) and adocument file (as an example of a relatively low access frequency). Inthis case, the former is stored in the high-order bits of the highaccess speed, and the later is stored in the low-order bits of the lowaccess speed.

[0146] The second embodiment of the method of data reading according tothe present invention will be described hereinbelow.

[0147] In the second embodiment, a multilevel EEPROM is used in the sameway as with the case of the first embodiment of the method of datareading according to the present invention. The essential configurationof the multilevel EEPROM is the same as with the case of the firstembodiment, except that an eight-level EEPROM having a storage capacityof 12 Mbits is used in the second embodiment. The configuration of theeight-level EEPROM is basically the same as with the case of the firstembodiment, so that any detailed description thereof is omitted herein.

[0148]FIG. 10 shows the flowchart showing a procedure of the secondembodiment of the reading method according to the present invention. Inthe second embodiment, an eight-level EEPROM having a storage capacityof 12 Mbits will be explained by way of example. The eight-level EEPROMhas a logical address space of [00 0000] to [BF FFFF] and a physicaladdress space of [00 0000] to [3F FFFF] in hexadecimal notation.Further, each memory cell stores 3 bit (=eight levels) data (000, 001,010, 011, 100, 101, 110, 111), so that the threshold voltages of (0 V, 1V, 2 V, 3 V, 4 V, 5 V, 6 V, 7 V) are set to memory cells according tothese data.

[0149] Further, when the physical address of a memory cell is Ap, thedata of the logical address Ap is stored in the highest-order bit of therespective components of the thee bits; the logical address (Ap+[40000]) is stored in the medium bit; and the logical address (Ap+[80 0000]is stored in the lowest-order bit thereof.

[0150] In other words, in the data rewriting operation, when the logicaladdress A1 in the range of [00 0000] to [3F FFFF] and the data (0 or 1)to be stored are designated, the highest-order bit of the memory cellexisting at the physical address A1 is rewritten to the designated data.

[0151] On the other hand, in the data rewriting operation, when thelogical address A1 in the range of [40 0000] to [7F FFFF] and the data(0 or 1) to be stored are designated, the medium-order bit of the memorycell existing at the physical address (A1−[40 0000]) is rewritten to thedesignated data.

[0152] Further, in the data rewriting operation, when the logicaladdress A1 in the range of [80 0000] to [BF FFFF] and the data (0 or 1)to be stored are designated, the lowest-order bit of the memory cellexisting at the physical address (A1−[80 0000]) is rewritten to thedesignated data.

[0153] In FIG. 10, when an external read instruction is input in stepS21 and further a logical address signal is input to the input I/F 7 instep S22, the signal controller 6 determines whether the input logicaladdress signal indicates an address in the range of [00 0000] to [3FFFFF] or not in step S23.

[0154] In step S23, when the logical address signal indicates an addressin the range of [00 0000] to [3F FFFF], since the logical addressmatches the physical address, it is decided that the data to be read isthe highest-order bit of the three bits in step S24. In this case, areference voltage of 3.5 V is applied to the control gate 19 of theselected memory cell. And, further it is determined whether a currentflows between the drain 12 and the source 13 through the selected bitline 15 and the sense amplifier 5 in step S25.

[0155] In step S25, when the current flows between the drain 12 and thesource 13 of the selected memory cell; that is, when the selected memorycell is conductive, the threshold voltage of this selected memory cellis any one of 0 V, 1 V, 2 V and 3 V and further the three bit datadesignated by these threshold voltages are “000”, “001”, “010” and“011”. It is thus decided that the highest-order bit of the three bitsof the storage status of this memory cell is “0”. The decided data isoutput immediately via output I/F 8 in step S26.

[0156] On the other hand, in step S25, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, thethreshold voltage of this selected memory cell is any one of 4 V, 5 V, 6V and 7 V and further the three bit data designated by these thresholdvoltages are “100”, “101”, “110” and “111”. It is thus decided that thehighest-order bit of the three bits of the storage status of this memorycell is “1”. The decided data is output immediately via output I/F 8 instep S27.

[0157] Further, in step S23, when the logical address signal input tothe input I/F 7 does not indicate an address in the range of [00 0000]to [3F FFFF], it is determined whether the further input logical addresssignal indicates an address in the range of [40 0000] to [7F FFFF] ornot in step S28.

[0158] Here, in step S28, when the logical address signal input to theinput I/F 7 indicates an address in the range of [40 0000] to [7F FFFF],the logical address does not match the physical address; that is, thephysical address is (logical address−[40 0000].) It is thus decided thatthe data to be read is the medium-order bit of the three bits in stepS29. In this case, a reference voltage of 3.5 V is applied to thecontrol gate 19 of the selected memory cell. And, further it isdetermined whether a current flows between the drain 12 and the source13 through the selected bit line 15 and the sense amplifier 5 in stepS30.

[0159] In step S30, when a current flows between the drain 12 and thesource 13 of the selected memory cell, the threshold voltage of thememory cell is any one of 0 V, 1 V, 2 V and 3 V. Here, the three bitdata designated by the threshold voltages of 0 V and 1 V are “000” and“001”; that is, the medium-order bit is “0” in both. Further, the threebit data designated by the threshold voltages of 2 V and 3 V are “010”and “011”; that is, the medium-order bit is “1” in both. Therefore, inorder to decide the medium-order bit, the signal controller 6 instructsthe voltage controller 3 to apply a reference voltage of 1.5 V to thecontrol gate 19 of the selected memory cell in step S31.

[0160] Further, in step S31, when a current flows between the drain 12and the source 13 of the selected memory cell, the threshold voltage ofthe memory cell is 0 V or 1 V. It is thus decided that the medium-orderbit of the three bits of the storage status of this memory cell is “0”.The decided data is output immediately through the output I/F 8 in stepS32.

[0161] On the other hand, in step S31, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, thethreshold voltage of the memory cell is 2 V or 3 V. It is thus decidedthat the medium-order bit of the three bits of the storage status ofthis memory cell is “1”. The decided data is output immediately viaoutput I/F 8 in step S33.

[0162] Further, in step S30, when the current does not flow between thedrain 12 and the source 13 of the selected memory cell, the thresholdvoltage of the memory cell is any one of 4 V, 5 V, 6 V and 7 V. Here,the three-bit data designated by the threshold voltages of 4 V and 5 Vare “100” and “101”; that is, the medium-order bit is “0” in both.Further, the three-bit data designated by the threshold voltages of 6 Vand 7 V are “010” and “011”; that is, the medium-order bit is “1” inboth. Therefore, in order to decide the medium-order bit, the signalcontroller 6 instructs the voltage controller 3 to apply a referencevoltage of 5.5 V to the control gate 19 of the selected memory cell instep S34.

[0163] Further, in step S34, when a current flows between the drain 12and the source 13 of the selected memory cell, the threshold voltage ofthe memory cell is 4 V or 5 V. It is thus decided that the medium-orderbit of the three bits of the storage status of this memory cell is “0”.The decided data is output immediately via output I/F 8 in step S32.

[0164] On the other hand, in step S34, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, thethreshold voltage of the memory cell is 6 V or 7 V. It is thus decidedthat the medium-order bit of the three bits of the storage status ofthis memory cell is “1”. The decided data is output immediately viaoutput I/F 8 in step S33.

[0165] Further, in step S28, when the logical address signal input tothe input I/F 7 does not indicate an address in the range of [40 0000]to [7F FFFF], the logical address signal indicates an address in therange of [80 0000] to [BF FFFF]; that is, the physical address=(logicaladdress−[80 0000].) It is thus decided that the data to be read is thelowest-order bit of the three bits in step S35. In this case, areference voltage of 3.5 V is applied to the control gate 19 of theselected memory cell. And, it is detected whether a current flowsbetween the drain 12 and the source 13 through the selected bit line 15and the sense amplifier 5 in step S36.

[0166] In step S36, when a current flows between the drain 12 and thesource 13, the threshold voltage of the memory cell is any one of 0 V, 1V, 2 V and 3 V. The three bit data designated by the threshold voltagesof these threshold voltages are thus “000”, “001”, “010” and “011”.Therefore, it is impossible to specify the lowest-order bit at thisstage. In order to specify the lowest-order bit, the signal controller 6instructs the voltage controller 3 to apply a reference voltage of 1.5 Vto the control gate 19 of the selected memory cell in step S37.

[0167] In step S37, when a current flows between the drain 12 and thesource 13 of the selected memory cell, the threshold voltage of thememory cell is 0 V or 1 V. It is thus decided that the three-bit dataspecified by these threshold voltages are “000” or “001”. Therefore, inorder to specify the lowest-order bit, the signal controller 6 instructsthe voltage controller 3 to apply a reference voltage of 0.5 V to thecontrol gate 19 of the selected memory cell in step S38.

[0168] Further, in step S38, when a current flows between the drain 12and the source 13 of the selected memory cell, the threshold voltage ofthe memory cell is 0 V. It is thus decided that the lowest-order bit ofthe three bits of the storage status of this memory cell is “0”. Thedecided data is output immediately via output I/F 8 in step S39.

[0169] On the other hand, in step S38, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, thethreshold voltage of the memory cell is 1 V. It is thus decided that thelowest-order bit of the three bits of the storage status of this memorycell is “1”. The decided data is output immediately via output I/F 8 instep S40.

[0170] Further, in step S37, when the current does not flow between thedrain 12 and the source 13 of the selected memory cell, the thresholdvoltage of the memory cell is 2 V or 3 V. The three-bit data designatedby the threshold voltages of these threshold voltages are thus “010” or“011”. Therefore, in order to specify the lowest-order bit, the signalcontroller 6 instructs the voltage controller 3 to apply a referencevoltage of 2.5 V to the control gate 19 of the selected memory cell instep S41.

[0171] In step S41, when a current flows between the drain 12 and thesource 13 of the selected memory cell, the threshold voltage of thememory cell is 2 V. It is thus decided that the lowest-order bit of thethree bits of the storage status of this memory cell is “0”. The decideddata is output immediately via output I/F 8 in step S39.

[0172] On the other hand, in step S41, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, thethreshold voltage of the memory cell is 3 V. It is thus decided that thelowest-order bit of the components of the storage status of this memorycell is “1”. The decided data is output immediately via output I/F 8 instep S40.

[0173] Further, in step S36, when the current does not flow between thedrain 12 and the source 13, the threshold voltage of the memory cell isany one of 4 V, 5 V, 6 V and 7 V. The three-bit data designated by thethreshold voltages of these threshold voltages are thus “100”, “101”,“110” and “111”. Therefore, it is impossible to specify the lowest-orderbit at this stage. Therefore, in order to specify the lowest-order bit,the signal controller 6 instructs the voltage controller 3 to apply areference voltage of 5.5 V to the control gate 19 of the selected memorycell in step S42.

[0174] In step S42, when a current flows between the drain 12 and thesource 13 of the selected memory cell, the threshold voltage of thememory cell is 4 V or 5 V. The three-bit data designated by thesethreshold voltages are thus “100” or “101”. Therefore, in order tospecify the lowest-order bit, the signal controller 6 instructs thevoltage controller 3 to apply a reference voltage of 4.5 V to thecontrol gate 19 of the selected memory cell in step S43.

[0175] Further, in step S43, when a current flows between the drain 12and the source 13 of the selected memory cell, the threshold voltage ofthe memory cell is 4 V. It is thus decided that the lowest-order bit ofthe three bits of the storage status of this memory cell is “0”. Thedecided data is output immediately via output I/F 8 in step S39.

[0176] Further, in step S43, when the current does not flow between thedrain 12 and the source 13 of the selected memory cell, the thresholdvoltage of the memory cell is 5 V. It is thus decided that thelowest-order bit of the three bits of the storage status of this memorycell is “1”. The decided data is output immediately via output I/F 8 instep S40.

[0177] Further, in step S42, when the current does not flow between thedrain 12 and the source 13 of the selected memory cell, the thresholdvoltage of the memory cell is 6 V or 7 V. The three-bit data designatedby the threshold voltages of these threshold voltages are thus “110” or“111”. Therefore, in order to specify the lowest-order bit, the signalcontroller 6 instructs the voltage controller 3 to apply a referencevoltage of 6.5 V to the control gate 19 of the selected memory cell instep S44.

[0178] In step S44, when a current flows between the drain 12 and thesource 13 of the selected memory cell, the threshold voltage of thememory cell is 6 V. It is thus decided that the lowest-order bit of thethree bits of the storage status of this memory cell is “0”. The decideddata is output immediately through the output I/F 8 in step S39.

[0179] On the other hand, in step S44, when the current does not flowbetween the drain 12 and the source 13 of the selected memory cell, thethreshold voltage of the memory cell is 7 V. It is thus decided that thelowest-order bit of the three bits of the storage status of this memorycell is “1”. The decided data is output immediately via output I/F 8 instep S40.

[0180] As described above, in the second embodiment, the logicaladdresses in the range of [00 0000] to [BF FFFF] are dividedhieratically into an address space of relatively high access speed andan address space of relatively low access speed. Here, the address spaceof relatively high access speed is determined as an address space A₁(logical addresses: [00 0000] to [3F FFFF]. Further, the address spaceof relatively low access speed is further divided hieratically into twoaddress spaces. That is, the address space of the medium access speednext to the address space A₁ is determined as an address space A₂(logical addresses: [40 0000] to [BF FFFF], and the address space of thelowest access speed next to the address space A₂ is determined as anaddress space A₃ (logical addresses: [40 0000] to [BF FFFF], bothhierarchically.

[0181] Further, a partial space (logical addresses: [00 0000] to [3FFFFF ]) one-to-one corresponding to the address space formed by thephysical addresses ([00 0000] to [3F FFFF]) within the logical addressesin the range of [00 0000] to [7F FFFF] is determined as the addressspace A₁ of relatively high access speed. Further, data in the addressspace A₁ is stored in the specific bit of the storage status of thememory cell, that is, the highest-order bit. Further, data in theaddress space A₂ of the access speed next to that of the address spaceA₁ is stored in the medium-order bit. Further, data in the address spaceA₃ of the access speed next to that of the address space A₂ is stored inthe lowest-order bit.

[0182] When the input logical address is included in the above-mentionedpartial space (i.e., logical addresses [00 0000] to [3F FFFF]), thislogical address designates data of the highest-order bit. It is thuspossible to immediately decide this highest-order bit data by a singledecision by use of the reference voltage of 3.5 V. The decidedhighest-order bit data is then output. Further, when the input logicaladdress is not included in the above-mentioned partial space (i.e.,logical addresses [00 0000] to [3F FFFF]) but included in the addressspace (i.e., logical addresses [40 0000] to [7F FFFF]) adjacent to thepartial space, this logical address designates data of the medium-orderbit. It is thus possible to immediately decide this medium-order bitdata by two decisions by use of the reference voltages of 3.5 V and 1.5or 5.5 V. The decided medium order-bit data is then output.

[0183] Therefore, when the data of the highest-order bit is read, it ispossible to increase the access speed three times hither than that ofwhen the respective threshold voltages are checked by use of all thereference voltages. Further, when the data of the medium-order bit isread, it is possible to increase the access speed about 1.5 times higherthan that of when the respective threshold voltages are checked by useof all the decision voltages. Therefore, the data having the highestaccess frequency can be stored in the highest-order bits, the datahaving the medium access frequency in the medium-order bits, and thedata having a relatively low access frequency in the lowest-order bits.A programmer thus can operate the EEPROM as if a single- or double-stagehigh speed memory devices were provided. It is thus possible to readdata from the multilevel EEPROM in an extremely high efficiency.

[0184] The multilevel semiconductor memory device has been explained bytaking the case of the EEPROM of floating gate type memory cells.However, without being limited only thereto, it is possible to apply themultilevel semiconductor memory device according to the presentinvention to MNOS type memory cells.

[0185] Further, without being limited to only EEPROM, the data readingmethod according to the present invention can be applied to the casewhen the multilevel data stored in EPROM or PROM are read. Further, thedata reading method according to the present invention can be applied toa mask ROM whose storage status can be obtained by changing thethreshold values thereof on the basis of control of the concentration ofimpurities put in the channel regions of field effect transistors by ionimplantation.

[0186] The data reading according to the present invention can furtherbe applied to DRAMs (Dynamic Random Access memory). It can be understoodthat refreshing must be done after data reading in case of DRAMs.

[0187] Further, in the first and second embodiments, two or three bitsare stored in a single memory cell. However, the present invention canbe applied to the case where four or more levels (i.e., two or morebits) are stored in a single memory cell. In particular, the effect ofthe present invention can be increased with increasing capacity of thememory cell.

[0188] As described above, the data reading methods in the first andsecond embodiments are, after an address of a memory cell is decided, todetermine whether a current flows between a drain and a source of thememory cell by applying a judging voltage to a control gate of thememory cell having a specific threshold voltage to judge data stored inthe memory cell.

[0189] Not only this, data stored in a memory cell can be judged bycomparing an output voltage of the memory cell with a predeterminedjudging voltage. This method will be explained with reference to FIG.11.

[0190] A judging circuit shown in FIG. 11 is provided between the cellarray 1 and the multiplexer 4 shown in FIG. 1. In FIG. 11, a thresholdvoltage Vth1 is applied to the inverting input terminal of a senseamplifier 43 via first output buffer. The first output buffer includesan inverter 40 and transistors 41 and 42. The threshold voltage Vth1corresponds to a low-order bit D0 set in a memory cell 1 a of the memorycell array 1. Applied to the non-inverting input terminal of the senseamplifier 43 via second output buffer is a judging voltage V47 set in atransistor 47. The second output buffer includes an inverter 46 andtransistors 44 and 45.

[0191] When the threshold voltage Vth1 is smaller than the judgingvoltage V47, the output of the sense amplifier 43 becomes HIGH. Thus,the low-order bit D0 is judged to be “1”.

[0192] Since the output of the sense amplifier 43 is HIGH, a transistor52 turns on, while a transistor 54 turns off due to the existence of aninverter 53 provided between both transistors.

[0193] A judging voltage V52 set in the transistor 52 is thus applied tothe non-inverting input terminal of a sense amplifier 48 via thirdoutput buffer. The third output buffer includes an inverter 51 andtransistors 49 and 50.

[0194] Further, a threshold voltage Vth2 corresponding to a high-orderbit D1 set in the memory cell 1 a is applied to the inverting inputterminal of the sense amplifier 48 via first output buffer.

[0195] When the threshold voltage Vth2 is smaller than the judgingvoltage V52, the high-order bit D1 is judged to be “1” because theoutput of the sense amplifier 48 becomes HIGH. On the other hand, whenVth2 is greater than V52, the high-order bit D1 is judged to be “0”because the output of the sense amplifier 48 becomes LOW.

[0196] Next, when the threshold voltage Vth1 is greater than the judgingvoltage V47, the low-order bit D0 is judged to be “0” because the outputof the sense amplifier 43 becomes LOW.

[0197] Since the output of the sense amplifier 43 is LOW, the transistor52 turns off, while the transistor 54 turns on due to the existence ofthe inverter 53. A judging voltage V54 set in the transistor 54 isapplied to the non-inverting input terminal of the sense amplifier 48via third output buffer. Applied to the inverting input terminal of thesense amplifier 48 is the threshold voltage Vth2 via first outputbuffer.

[0198] When the threshold voltage Vth2 is smaller than the judgingvoltage V54, the high-order bit D1 is judged to be “1” because theoutput of the sense amplifier 48 becomes HIGH. On the other hand, whenVth2 is greater than V54, the high-order bit D1 is judged to be “0”because the output of the sense amplifier becomes LOW.

[0199] As described above, 2-bit (4-level) data (00, 01, 10, 11) isjudged. The judging circuit shown in FIG. 11 can be applied to afour-level (or more) memory cell by increasing the number of senseamplifiers and judging voltage applying circuits according to the numberof data bits.

[0200] Further, the scope of the present invention includes thefollowing case: the program codes of software for achieving thefunctions as disclosed by the preferred embodiments according to thepresent invention are supplied to a system or a computer connected tovarious devices activated so as to achieve those functions. Further, theabove-mentioned devices are activated in accordance with a programstored in the system or the computer (CPU or MPU).

[0201] Further, in this case, the program codes themselves of thesoftware can achieve the functions of the preferred embodimentsaccording to the present invention. The program codes themselves andmeans for supplying the program codes to the computer, such as a storagemedium 31 shown in FIG. 1 for storing the program codes are included inthe scope of the present invention.

[0202] That is, the program codes stored in the storage medium 31 areread by a recording and reproducing apparatus 30 shown in FIG. 1connected to the signal controller 6 via input I/F 8, so that thecomputer constituting the signal controller 6 can be activated. Further,as the storage medium 31 for recording these programs and codes, thereare a floppy disk, a hard disk, an optical disk, a magneto-optic disk,CD-ROM, a magnetic tape, a non-volatile memory card, a ROM, etc.

[0203] As described above, according to the present invention, even ifmultilevel data stored in a single memory cell is lost, it is possibleto execute the error correction effectively.

[0204] Further, according to the present invention, since data of higheraccess frequency can be read at high speed according to the inputlogical addresses, it is possible to shorten the access time markedly indata read operation.

What is claimed is:
 1. A semiconductor device comprising: a plurality ofmultilevel memory cells, each cell storing at least three levels of dataeach; arranging means for accepting at least a first data composed of aplurality of first data bits and a second data composed of a pluralityof second data bits, the first and the second data being coded by acoding method, and for arranging the first and the second data bits inorder that at least a bit of an N-order of the first data bits and a bitof the N-order of the second data bits are stored in one of the cells,the N being an integral number; generating means for generating at leasta voltage corresponding to the N-order bits; and applying means forapplying the voltage to the one of the cells in response to an addressinformation corresponding to the one of the cells.
 2. The semiconductordevice according to claim 1, wherein the arranging means controls thenumber of the data bits to be stored in the one of the cells inaccordance with error-correcting capability of the coding method.
 3. Thesemiconductor device according to claim 1, wherein the arranging meansputs an m number of the data bits having a length n in positions of m×narrangement to store the m number of the data bits in each cell, m and nbeing an integral number.
 4. The semiconductor device according to claim1, wherein the multilevel memory cells are non-volatile semiconductormemories.
 5. A method of writing data of bits in a semiconductor devicehaving a plurality of multilevel memory cells, each cell storing atleast three levels of data each, comprising the steps of: entering atleast a first data composed of a plurality of first data bits and asecond data composed of a plurality of second data bits, the first andthe second data being coded by a coding method; arranging the first andthe second data bits such that at least a bit of an N-order of the firstdata bits and a bit of the N-order of the second data bits are stored inone of the cells, the N being an integral number; generating at least avoltage corresponding to the N-order bits; and applying the voltage tothe one of the cells in response to an address information correspondingto the one of the cells.
 6. A computer readable medium storing programcode for causing a computer to write data of bits in a semiconductordevice having a plurality of multilevel memory cells, each cell storingat least three levels of data each, comprising: first program code meansfor entering at least a first data composed of a plurality of first databits and a second data composed of a plurality of second data bits, thefirst and the second data being coded by a coding method; and secondprogram code means for arranging the first and the second data bits suchthat at least a bit of an N-order of the first data bits and a bit ofthe N-order of the second data bits are stored in one of the cells, theN being an integral number.
 7. The computer readable medium according toclaim 6 further comprising: third program code means for generating atleast a voltage corresponding to the N-order bits; and fourth programcode means for applying the voltage to the one of the cells in responseto an address information corresponding to the one of the cells.
 8. Asemiconductor device comprising: converting means for converting alogical address into a physical address; a plurality of multilevelmemory cells arranged so as to correspond to a physical address spaceincluding the physical address, each cell storing 2^(n) levels of dataeach expressed by n (n≧2) number of bits (X1, X2, . . . , Xn); judgingmeans for judging whether a logical address space including the logicaladdress matches the physical address space; specifying means forspecifying the most significant bit X1, by one-time specifyingoperation, by means of a reference value when the logical address spacematches the physical address space; and outputting means for outputtingthe specified bit from one of the cells corresponding to the physicaladdress.
 9. The semiconductor device according to claim 8 wherein eachcell includes at least one transistor and the specifying meanscomprises: first means for generating a voltage corresponding to thereference value; second means responsive to the physical address forgenerating an address signal; third means responsive to the addresssignal for applying the voltage to one of the cells corresponding to thephysical address; fourth means for determining whether a current flowsbetween a source and a drain of the transistor; and fifth means forspecifying the most significant bit X1 in accordance with a result ofthe determination.
 10. The semiconductor device according to claim 8wherein the specifying means comprises: a comparator having a firstinput terminal connected to an output of each cell, a voltagecorresponding to the most significant bit X1 being applied to the firstinput terminal; and a voltage applying circuit, connected to a secondinput terminal of the comparator, for applying the voltage correspondingto the reference value to the second input terminal, the mostsignificant bit X1 being specified in accordance with a result ofcomparison by the comparator.
 11. The semiconductor device according toclaim 8 wherein the specifying means specifies the bits (X1, X2, . . . ,Xn), by n-time specifying operation maximum, by means of maximum nnumber of different reference values when judged that the logicaladdress space does not match the physical address space.
 12. Thesemiconductor device according to claim 11 wherein each cell includes atleast one transistor and the specifying means comprises: first means forgenerating n number of voltages corresponding to the n number ofreference values; second means responsive to the physical address forgenerating an address signal; third means responsive to the physicaladdress for applying the voltages to one of the cells corresponding tothe address signal; fourth means for applying maximum the n number ofvoltages to a gate of the transistor at a specific voltage applyingorder until a current flows between a source and a drain of thetransistor; and means for specifying the bits (X1, X2, . . . , Xn) bydetecting the current.
 13. The semiconductor device according to claim11 wherein the specifying means comprises: a comparator having a firstinput terminal connected to an output of each cell, voltagescorresponding to the bits (X1, X2, . . . , Xn) being applied to thefirst input terminal; and a voltage applying circuit, connected to asecond input terminal of the comparator, for applying voltagescorresponding to maximum the n number of reference values to the secondinput terminal, the bits (X1, X2, . . . , Xn) being specified inaccordance with a result of comparison by the comparator.
 14. A methodof reading n (n≧2) number of bits (X1, X2, . . . , Xn) from a pluralityof multilevel memory cells arranged so as to correspond to a physicaladdress space, each cell storing 2^(n) levels of data each expressed bythe bits (X1, X2, . . . , Xn), comprising the steps of: converting alogical address into a physical address included in the physical addressspace; judging whether a logical address space including the logicaladdress matches the physical address space; specifying the mostsignificant bit X1, by one-time specifying operation, by means of areference value when judged that the logical address space matches thephysical address space; and outputting the specified bit from one of thecells corresponding to the physical address.
 15. The method according toclaim 14 further comprises the step of specifying the bits (X1, X2, . .. , Xn), by n-time specifying operation maximum, by means of maximum nnumber of different reference values when judged that the logicaladdress space does not match the physical address space.
 16. A method ofreading n (n≧2) number of bits (X1, X2, . . . , Xn) from a plurality ofmultilevel memory cells arranged so as to correspond to a physicaladdress space, each cell having at least one transistor, each cellstoring 2^(n) levels of data each expressed by the bits (X1, X2, . . . ,and Xn), comprising the steps of: converting a logical address into aphysical address included in the physical address space; judging whethera logical address space including the logical address matches thephysical address space; specifying the most significant bit X1 byapplying a predetermined reference voltage to a gate of the transistorto determine whether a current flows between a source and a drain of thetransistor when the logical address space matches the physical addressspace; and outputting the specified bit from one of the cellscorresponding to the physical address.
 17. The method according to claim16 further comprises the step of specifying the bits (X1, X2, . . . ,Xn) by applying maximum n number of different reference voltages to thegate of the transistor at a specific voltage applying order until acurrent flows between the source and the drain when judged that thelogical address space does not match the physical address space.
 18. Amethod of reading n (n≧2) number of bits (X1, X2, . . . , Xn) from aplurality of multilevel memory cells arranged so as to correspond to aphysical address space, each cell having at least one transistor, eachcell storing 2^(n) levels of data each expressed by the bits (X1, X2, .. . , and Xn), comprising the steps of: converting a logical addressinto a physical address included in the physical address space; judgingwhether a logical address space including the logical address matchesthe physical address space; specifying the most significant bit X1 bycomparing an output voltage of the transistor corresponding to the mostsignificant bit with a reference voltage when the logical address spacematches the physical address space; and outputting the specified bitfrom one of the cells corresponding to the physical address.
 19. Themethod according to claim 18 further comprises the step of specifyingthe bits (X1, X2, . . . , Xn) by comparing output voltages of thetransistor corresponding to the bits (X1, X2, . . . , Xn) with referencevoltages corresponding to the bits (X2, . . . , Xn).
 20. A computerreadable medium storing program code for causing a computer to read n(n≧2) number of bits (X1, X2, . . . , Xn) from a plurality of multilevelmemory cells arranged so as to correspond to a physical address space,each cell storing 2^(n) levels of data each expressed by the bits (X1,X2, . . . , Xn), comprising: first program code means for converting alogical address into a physical address included in the physical addressspace; second program code means fop judging whether a logical addressspace including the logical address matches the physical address space;third program code means for specifying the most significant bit X1, byone-time specifying operation, by means of a reference value when judgedthat the logical address space matches the physical address space; andfourth program code means for outputting the specified bit from one ofthe cells corresponding to the physical address.
 21. The computerreadable medium according to claim 20 further comprising program codemeans for specifying the bits (X1, X2, . . . , Xn), by n-time specifyingoperation maximum, by means of maximum n number of different referencevalues when judged that the logical address space does not match thephysical address space.
 22. A computer readable medium storing programcode for causing a computer to read n (n≧2) number of bits (X1, X2, . .. , Xn) from a plurality of multilevel memory cells arranged so as tocorrespond to a physical address space, each cell having at least onetransistor, each cell storing 2^(n) levels of data each expressed by thebits (X1, X2, . . . , Xn), comprising: first program code means forconverting a logical address into a physical address included in thephysical address space; second program code means for judging whether alogical address space including the logical address matches the physicaladdress space; third program code means for specifying the mostsignificant bit X1 by applying a reference voltage to a gate of thetransistor when the logical address space matches the physical addressspace to determine whether a current flows between a source and a drainof the transistor; and fourth program code means for outputting thespecified bit from one of the cells corresponding to the physicaladdress.
 23. The computer readable medium according to claim 22 furthercomprising the program code means for specifying the bits (X1, X2, . . ., Xn) by applying maximum n number of different reference voltages tothe gate of the transistor at a specific voltage applying order until acurrent flows between the source and the drain when judged that thelogical address space does not match the physical address space.
 24. Acomputer readable medium storing program code for causing a computer toread n (n≧2) number of bits (X1, X2, . . . , Xn) from a plurality ofmultilevel memory cells arranged so as to correspond to a physicaladdress space, each cell having at least one transistor, each cellstoring 2^(n) levels of data each expressed by the bits (X1, X2, . . . ,Xn), comprising: first program code means for converting a logicaladdress into a physical address included in the physical address space;second program code means for judging whether a logical address spaceincluding the logical address matches the physical address space; thirdprogram code means for specifying the most significant bit X1 bycomparing an output voltage of the transistor corresponding to the mostsignificant bit with a reference voltage when the logical address spacematches the physical address space; and fourth program code means foroutputting the specified bit from one of the cells corresponding to thephysical address.
 25. The computer readable medium according to claim 24further comprising the program code means for specifying the bits (X1,X2, . . . , Xn) by comparing voltages corresponding to the bits (X1, X2,. . . , Xn) with reference voltages corresponding to the bits (X1, X2, .. . , Xn) when judged that the logical address space does not match thephysical address space.
 26. A semiconductor device having a plurality ofmultilevel memory cells, each cell storing one of at least three levelsof data each, the semiconductor device comprising a bit disperser fordispersing bits over the plurality of multilevel memory cells to storethe bits therein, the bits constituting at least one code data coded bya coding method to be stored in the cells.
 27. The semiconductor deviceaccording to claim 26, wherein the bit disperser controls the number ofbits to be stored in at least one of the cells in accordance withcapability of code error correction of the coding method.
 28. Thesemiconductor device according to claim 26, wherein the bit disperserputs the bits of M number of code data, each code data having a codelength N, into positions of arrangement in M lines×N rows and stores theM number of bits in each cell, the M and N being an integral number. 29.The semiconductor device according to claim 26, wherein the multilevelmemory cells are non-volatile semiconductor memories.
 30. A computerreadable medium storing program code for causing a computer to storedata in a semiconductor device having a plurality of multilevel memorycells, each cell storing one of at least three levels of data each,comprising a program code means for dispersing bits over the pluralityof multilevel memory cells to store the bits therein, the bitsconstituting at least one code data coded by a coding method to bestored in the cells.
 31. A method of writing at least one code datacoded by a coding method in a semiconductor device having a plurality ofmultilevel memory cells, each cell storing one of at least three levelsof data each, the method comprising the step of dispersing bitsconstituting the code data over the plurality of multilevel memorycells.
 32. A computer readable medium storing program code for causing acomputer to write at least one code data coded by a coding method in asemiconductor device having a plurality of multilevel memory cells, eachcell storing one of at least three levels of data each, comprising theprogram code for dispersing bits constituting the code data over theplurality of multilevel memory cells.
 33. A semiconductor devicecomprising: inputting means for inputting a logical address; convertingmeans for converting the logical address into a physical address; aplurality of multilevel memory cells arranged so as to correspond tophysical addresses, each cell storing at least three levels of dataeach, the data being expressed by data components of two-dimension ormore; controlling means for selecting one of the cells corresponding tothe physical address and designating one of the data components inaccordance with the logical address; and outputting means for outputtingthe designated data component, wherein the semiconductor device has ajudging value for specifying, by one-time specifying operation, at leastone of the data components, and when the logical address is included inan address space A1 that corresponds to an address space including thephysical address, the controlling means specifies the designated datacomponent by means of the judging value, thus the specified data beingoutput by the outputting means.
 34. The semiconductor device accordingto claim 33, wherein each cell stores 2^(n) levels of data eachexpressed by data components (X1, X2, . . . , Xn) of n-th dimension(n≧2), the semiconductor device having a first judging value forspecifying, by one-time specifying operation, at least the datacomponent X1 having data of the logical address included in the addressspace A1, when the logical address included in the address space A1 isinput by the inputting means, the data component X1 specified by thecontrolling means by means of the first judging value is output by theoutputting means among the data components stored in the cellcorresponding to the logical address included in the address space A1.35. The semiconductor device according to claim 34, having judgingvalues for specifying the data components (X2, . . . , Xn) of a logicaladdress included in address spaces (A2, . . . , An) close to the addressspace A1, wherein the data components (X2, . . . , Xn) have the datastored sequentially in the order of closeness to the address space A1,the controlling means specifies a data component Xk (k=1, 2, . . . , n),by k-time specifying operation, by means of the judging values inaccordance with an address space including the logical address input bythe inputting means, thus the data component Xk being output by theoutputting means.
 36. The semiconductor device according to claim 33,wherein each cell is provided with a control gate and a chargeaccumulating layer having a floating gate.
 37. A method of reading datastored in a semiconductor device having at least one multilevel memorycell provided so as to correspond to a physical addresses converted froman input logical address, the cell having a control gate, a source and adrain, the cell storing at least three levels of data each, the databeing expressed by data components of two-dimension or more; comprisingthe steps of: preparing a judging value for specifying at least one ofthe data components; and applying a voltage corresponding to the judgingvalue to the control gate to determine whether a current flows betweenthe source and the drain when the logical address is included in anaddress space A1 that corresponds to an address space including thephysical address.
 38. The method according to claim 37, wherein the cellstores 2^(n) levels of data each expressed by data components (X1, X2, .. . , Xn) of n-th dimension (n≧2), the data component X1 having data ofthe logical address included in the address space A1, further comprisingthe steps of: preparing a first judging value for specifying at leastthe data component X1; specifying the data component X1 by means of thefirst judging value among data components corresponding to the inputlogical address included in the address space A1; and outputting thedata component X1 specified by means of the first judging value amongdata components corresponding to the input logical address included inthe address space A1.
 39. The method according to claim 38, furthercomprising the steps of: preparing judging values for specifying thedata components (X2, . . . , Xn) having data of logical addressesincluded in address spaces (A2, . . . , An) close to the address spaceA1, the data components (X2, . . . , Xn) having the data storedsequentially in the order of closeness to the address space A1;specifying a data component Xk (k=1, 2, . . . , n), by k-time specifyingoperation, by means of the judging values in accordance with an addressspace including an input logical address; and outputting the datacomponent Xk.
 40. A computer readable medium storing program code forcausing a computer to read data stored in a semiconductor device havingat least one multilevel memory cell provided so as to correspond to aphysical addresses converted from an input logical address, the cellhaving a control gate, a source and a drain, the cell storing at leastthree levels of data each, the data being expressed by data componentsof two-dimension or more; comprising: first program code means forpreparing a judging value for specifying at least one of the datacomponents; and second program code means for applying a voltagecorresponding to the judging value to the control gate to determinewhether a current flows between the source and the drain when thelogical address is included in an address space A1 that corresponds toan address space including the physical address.
 41. The computerreadable medium according to claim 40, wherein the cell stores 2^(n)levels of data each expressed by data components (X1, X2, . . . , Xn) ofn-th dimension (n≧2), the data component X1 having data of the logicaladdress included in the address space A1, further comprising: thirdprogram code means for preparing a first judging value for specifying atleast the data component X1; fourth program code means for specifyingthe data component X1 by means of the first judging value among datacomponents corresponding to the input logical address included in theaddress space A1; and fifth program code means for outputting the datacomponent X1 specified by means of the first judging value among datacomponents corresponding to the input logical address included in theaddress space A1.
 42. The computer readable medium according to claim41, further comprising: sixth program code means for preparing judgingvalues for specifying the data components (X2, . . . , Xn) having dataof logical addresses included in address spaces (A2, . . . , An) closeto the address space A1, the data components (X2, . . . , Xn) having thedata stored sequentially in the order of closeness to the address spaceA1; seventh program code means for specifying a data component Xk (k=1,2, . . . , n), by k-time specifying operation, by means of the judgingvalues in accordance with an address space including an input logicaladdress; and eighth program code means for outputting the data componentXk.
 43. A semiconductor device comprising: a plurality of multilevelmemory cells, each cell storing one of at least three different levelsof data each; first coding means for converting, by a coding method, afirst data into a first code composed of at least two-digit codecomponents; second coding means for converting, by a coding method, asecond data into a second code composed of at least two-digit codecomponents; and arranging means for arranging the code components inorder to store at least two pairs of code components in correspondingcells, each pair having a code component of the first code and a codecomponent of the second code of a same digit.
 44. The semiconductordevice according to claim 43 wherein the first and the second codes areof the same number of digits.
 45. The semiconductor device according toclaim 43 wherein the coding method employs the binary system.
 46. Thesemiconductor device according to claim 43 wherein each cell includes acontrol gate and a floating gate.
 47. The semiconductor device accordingto claim 43 wherein the cells are at least a member of the groupconsisting of an MNOS, a mask ROM, an EEPROM, an EPROM, a PROM, and anon-volatile flash memory.
 48. The semiconductor device according toclaim 43 further comprising correction means for correcting at least anerror occurring in the first code.
 49. A semiconductor devicecomprising: a plurality of multilevel memory cells, each cell storingone of at least three different levels of data each; coding means forconverting input data into a code of at least two digits by a codingmethod; and separating means for separating the code by a specificnumber of digits into at least a first and a second block of codecomponents to store at least a code component group in at least one ofthe cells, the group having a code component of the first block and acode component of the second block of a same digit.
 50. Thesemiconductor device according to claim 49 further comprising readingmeans for reading the code components stored in the cells and correctingat least one code train composed of the code components under errorcorrection capability of the coding method to output the corrected codetrain.
 51. The semiconductor device according to claim 50, wherein thereading means reads a data bit of a specific digit from each cell toform the code train.
 52. The semiconductor device according to claim 51,wherein each cell storing one of four different levels of data each andthe separating means separates the code into a first and a second blockof code components of a same number of digit to store a code componentpair at least in one of the cells, the pair having a code component ofthe first block and a code component of the second block of a samedigit.
 53. The semiconductor device according to claim 52, wherein eachof the two blocks is composed of data bits with redundant bits when theblocks are output.
 54. The semiconductor device according to claim 53,wherein the redundant bits are formed on the basis of the two blocks soas to correspond to each of the two blocks, the total number of thenumber of the data bits of each of the two blocks and the number of thecorresponding redundant bits being equal to the number of bits of thecode train.
 55. The semiconductor device according to claim 51, whereineach cell stores one of eight different levels of data each and theseparating means separates the code into a first, a second and a thirdblock of code components of a same number of digit to store a codecomponent group in at least one of the cells, the group having a codecomponent of the first block, a code component of the second block and acode component of the third block of a same digit.
 56. The semiconductordevice according to claim 55, wherein each of the three blocks iscomposed of data bits with redundant bits when the blocks are output.57. The semiconductor device according to claim 56, wherein theredundant bits are formed on the basis of the three blocks so as tocorrespond to each of the three blocks, the total number of the numberof the data bits of each of the three blocks and the number of thecorresponding redundant bits being equal to the number of bits of thecode train.
 58. The semiconductor device according to claim 56, whereinthe redundant bits include first redundant bits formed on the basis ofsecond redundant bits formed by means of Hamming code so as tocorrespond to each of the three blocks, the second redundant bits beingadded to each of the three blocks to form code trains, all bits of eachcode train being EX-ORed to form the first redundant bits so as tocorrespond to each code train, the total number of the number of thebits of each code train and the number of the corresponding firstredundant bits being equal to the number of bits of the code train. 59.The semiconductor device according to claim 55, wherein the first blockis composed of data bits with redundant bits and a fourth block formedby connecting the second and the third blocks is composed of data bitswith redundant bits when the first and the fourth blocks are output. 60.The semiconductor device according to claim 59, wherein the redundantbits are formed on the basis of the first, the second and the thirdblocks so as to correspond to the first and the fourth blocks, the totalnumber of the number of the data bits of the first block and the numberof the corresponding redundant bits and the total number of the numberof data bits of two blocks formed by dividing the fourth block and thenumber of the corresponding redundant bits being equal to the number ofbits of the code train.
 61. The semiconductor device according to claim51, wherein each cell storing one of sixteen different levels of dataeach and the separating means separates the code into a first, a second,a third and a fourth block of code components of a same number of digitto store a code component group in at least one of the cells, the grouphaving a code component of the first block, a code component of thesecond block, a code component of the third block and a code componentof the fourth block of a same digit.
 62. The semiconductor deviceaccording to claim 61, wherein each of the four blocks is composed ofdata bits with redundant bits when the blocks are output.
 63. Thesemiconductor device according to claim 62, wherein the redundant bitsare formed on the basis of the four blocks so as to correspond to eachof the four blocks, the total number of the number of the data bits ofeach of the four blocks and the number of the corresponding redundantbits being equal to the number of bits of the code train.
 64. Thesemiconductor device according to claim 63, wherein the redundant bitsinclude first redundant bits formed on the basis of second redundantbits formed by means of Hamming code so as to correspond to each of thefour blocks, the second redundant bits being added to each of the fourblocks to form code trains, all bits of each code train being EX-ORed toform the first redundant bits so as to correspond to each code train,the total number of the number of the bits of each code train and thenumber of the corresponding first redundant bits being equal to thenumber of bits of the code train.
 65. The semiconductor device accordingto claim 61, wherein a fifth block formed by connecting the first andthe second blocks and a sixth block formed by connecting the third andthe fourth blocks are composed of data bits with redundant bits whenthe, fifth and the sixth blocks are output.
 66. The semiconductor deviceaccording to claim 65, wherein the redundant bits are formed on thebasis of the first, the second, the third and the fourth blocks so as tocorrespond to the fifth and the sixth blocks, the total number of thenumber of the data bits of each of two blocks formed by dividing each ofthe fifth and the sixth blocks and the number of the correspondingredundant bits being equal to the number of bits of the code train. 67.The semiconductor device according to claim 49 wherein each cellincludes a control gate and a floating gate.
 68. The semiconductordevice according to claim 49 wherein the cells are at least a member ofthe group consisting of an MNOS, a mask ROM, an EEPROM, an EPROM, aPROM, and a non-volatile flash memory.